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| MOS FET 2SK3801 Absolute Maximum Ratings (Ta=25C) Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*1 Tch Tstg Ratings 40 20 70 140 Unit V V A A W mJ C C Electrical Characteristics Symbol Test Conditions (Ta=25C) External Dimensions TO-3P 1.8 5.00.2 15.60.4 13.6 9.6 4.80.2 2.00.1 min 40 Ratings typ max 10 100 4.0 6.0 Unit 100 (Tc=25C) 400 150 -40 to +150 * 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, RG = 50 V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr Rth (ch-c) Rth (ch-a) ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s 2.0 30 3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100 1.5 1.25 35.71 V A A V S m pF pF pF ns ns ns ns V ns C/W C/W 19.90.3 4.0 2.0 a b 3.20.1 20.0 min 4.0 max 2 3 1.05 -0.1 +0.2 +0.2 0.65 -0.1 5.450.1 15.80.2 5.450.1 1. Gate 2. Drain 3. Source 1.4 a) Part No. b) Lot No. (Unit: mm) (1) (2) (3) ID -- VDS Characteristics (typ.) 70 60 50 10V 5.5V 5.0V VGS = 4.5V ID -- VGS Characteristics (typ.) 70 60 VDS -- VGS Characteristics (typ.) 1.0 Re (yfs) -- ID Characteristics (typ.) 1000 (VDS = 10V) (Ta = 25C) (VDS = 10V) 0.8 50 40 30 20 10 0 0.5 1.0 1.5 2.0 0 0 Ta = 150C 25C -55C 40 30 20 10 0 VDS (V) ID (A) ID (A) 0.6 0.4 ID = 70A 0.2 35A Re (yfs) (S) 100 Tc = -55C 25C 150C 10 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 1 0 5 10 15 20 1 10 70 VDS (V) VGS (V) VGS (V) ID (A) RDS (ON) -- ID Characteristics (typ.) 7.0 6.0 Ta = 25C VGS = 10V RDS (ON) -- TC Characteristics (typ.) 10.0 8.0 ID = 35A VGS = 10V j-c 10 -- Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.) 30 VDS (ID = 35A) 15 RDS (ON) (m) 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 RDS (ON) (m) j-c (C/W) VDS (V) 1 20 VGS VDD = 8V 12V 14V 16V 24V 10 6.0 4.0 2.0 0 -60 -50 0.1 10 5 0 50 100 150 0.01 0.00001 0.0001 0.001 0.01 0 0.1 1 10 100 0 50 100 0 150 ID (A) Tc (C) Pw (s) Qg (nC) Capacitance -- VDS Characteristics (typ.) IDR -- VSD Characteristics (typ.) 50000 Safe Operating Area (single pulse) PD -- TC Characteristics 500 100 (O N) (Ta = 25C) VGS = 0V f = 1MHz 70 60 50 (Ta = 25C) PT IT ED 120 100 80 =1 Capacitance (pF) PT PT 0 10000 Ciss M LI PT =1 =1 s 40 30 20 Ta = 150C 25C -55C IC (A) 10 RD PD (W) IDR (A) S =1 m 0m s s 00 s 60 40 1000 Coss Crss 10 1 20 0.1 0.1 0 1 10 100 0 20 40 60 80 100 120 140 160 100 0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS (V) VSD (V) VDS (V) Tc (C) 112 VGS (V) |
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